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| Datasheet File OCR Text: |
| NTE2389 MOSFET N-Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2C/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Static Ratings Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Dynamic Ratings Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Ciss Coss Crss ID = 20A, VDS = 25V VDS = 25V, VGS = 0, f = 1MHz 8 - - - 13.5 560 300 - 750 400 mhos pF pF pF 1650 2000 BVDSS VGS(th) IDSS IGSS ID = 0.25mA, VGS = 0 ID = 1mA, VDS = VGS VDS = 60V, VGS = 0 TJ = +25C TJ = +125C 60 2.1 - - - - - 3.0 1 0.1 10 40 - 4.0 10 1.0 100 45 V V A mA nA m Symbol Test Conditions Min Typ Max Unit VGS = 30V, VDS = 0 RDS(on) ID = 20A, VGS = 10V Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Dynamic Ratings (Cont'd) Turn-On Time Turn-Off Time Internal Drain Inductance td (on) tr td (off) tf Ld Measured from contact screw on tab to center of die Measured from drain lead 6mm from package to center of die Internal Source Inductance Ls Measured from source lead 6mm from package to source bond pad VCC = 30V, VGS = 10V, ID = 3A, RGS = 50 - - - - - - - 25 60 125 100 3.5 4.5 7.5 40 90 160 130 - - - ns ns ns ns nH nH nH Symbol Test Conditions Min Typ Max Unit Reverse Diode Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge IDR IDRM VSD trr Qrr IF = 41A, VGS = 0 IF = 41A, VGS = 0, VR = 30V -diF/dt = 100A/s - - - - - - - 1.4 60 0.3 41 164 2.0 - - A A V ns C .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab |
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